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First line: 0.8um 2P2M Mixed Signal Features Design Rules 0.8um 2P2M Mixed Signal Electrical Abstract: .. Electrical Parameters-I Transistor Electrical Parameters-II Resistance ’ % # %* + %, %, & * & -. .& & & !/ & !# $ % &’ %# # ""# & * & $ &# % * - !/ ’ ’!# ’ * & & ’ $ .& & # % " ’ !"#""$ .. datasheet abstract.. |
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First line: Philips Semiconductors Power Bipolar Transistors Transistor Safe Operating Area SOAR Philips Semiconductors Abstract: .. Power Bipolar Transistors. Transistor Safe. Operating Area SOAR 1998 Dec 21 31. Philips Semiconductors. Power Bipolar Transistors. Transistor Safe. Operating Area SOAR 1998 Dec 21 32. Philips .. datasheet abstract.. |
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First line: 0.6um 1P3M Logic Features Design Rules 0.6um 1P3M Logic Electrical Parameters-I Transistor Abstract: .. Electrical Parameters-I Transistor Electrical Parameters-II Resistance , -. % -# %. / %0. %0. &-. &-. 1. 2& 133. &-. &-. 1. 2& 133. & & !4. & 3!4. & & !4. & 3!4. !" " ##$ " % %$$ 5. & $$ #$ & $! ’ " !#$ ’ * +#$6 .. datasheet abstract.. |
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First line: 0.5um 1P3M Logic Features Design Rules 0.5um 1P3M Logic Electrical Parameters-I Transistor Abstract: .. Electrical Parameters-I Transistor Electrical Parameters-II Resistance + +! , -. . . %+, %+ / 0% %+, %+ / 0% % % 1. % % % 1. % .. datasheet abstract.. |
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First line: DISCRETE SEMICONDUCTORS DATA SHEET Transistor Safe Operating Area SOAR Power Bipolar Transistors Abstract: .. Transistor Safe Operating Area SOAR Power Bipolar Transistors. 1998 Nov 24 2. Philips Semiconductors. Power Bipolar Transistors. Transistor Safe. Operating Area SOAR 1998 Nov 24 3. Philips Semiconductors .. datasheet abstract.. |
377.47 Kb |
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First line: Transistors General purpose transistor isolated dual transistors IMX9 FFeatures 2SD2114K chips package. Abstract: .. Transistors. General purpose transistor isolated dual transistors IMX9. Features 1 Two 2SD2114K chips in a SMT package. 2 Mounting possible with SMT3 auto-matic mounting machine. 3 Transistor .. datasheet abstract.. |
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First line: Transistors General purpose transistor dual transistors UMT1N IMT1A FFeatures 2SA1037AK chips package. Abstract: .. Transistors. General purpose transistor dual transistors UMT1N / IMT1A. Features 1 Two 2SA1037AK chips in a UMT or SMT package. 2 Mounting possible with UMT3 or SMT3 automatic mounting ma-chines .. datasheet abstract.. |
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First line: Transistors Medium Power Transistor 32V 2SD1664 2SD1858 FFeatures VCE sat VCE sat 0.15V typical . Abstract: .. Transistors. Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858. Features 1 Low VCE sat , VCE sat = 0.15V typical . IC / IB = 500mA / 50mA 2 Complements the 2SB1132 / 2SB1237. Structure Epitaxial .. datasheet abstract.. |
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First line: Transistors Power Transistor 80V 0.5A 2SD1782K FFeatures VCE sat . VCE sat 0.2V Typ. 0.5A Abstract: .. Transistors. Power Transistor 80V, 0.5A 2SD1782K. Features 1 Low VCE sat . VCE sat = 0.2V Typ. IC / I B = 0.5A / 50mA 2 High VCEO, VCEO = 80V 3 Complements the 2SB1198K. Structure Epitaxial .. datasheet abstract.. |
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First line: Transistors General Purpose Transistor 50V 0.15A 2SC2412K 2SC4081 2SC4617 2SC1740S FFeatures Cob. Abstract: .. Transistors. General Purpose Transistor 50V, 0.15A 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. Features 1 Low Cob. Cob = 2.0pF Typ. 2 Complements the 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS .. datasheet abstract.. |
118.09 Kb |
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First line: Transistors General Purpose Transistor 50V 0.15A 2SA1037AK 2SA1576A 2SA1774 2SA933AS FFeatures Excellent Abstract: .. Transistors. General Purpose Transistor 50V, 0.15A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS. Features 1 Excellent hFE linearity. 2 Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S .. datasheet abstract.. |
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First line: Transistors Frequency Transistor 32V 0.8A 2SB1197K FFeatures VCE sat . VCE sat 0.5V 0.5A 50mA Abstract: .. Transistors. Low Frequency Transistor 32V, 0.8A 2SB1197K. Features 1 Low VCE sat . VCE sat 0.5V. Ic / I B = 0.5A / 50mA 2 IC = 0.8A. 3 Complements the 2SD1781K. Structure Epitaxial planar .. datasheet abstract.. |
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First line: Transistors General purpose transistor dual transistors IMZ4 FFeatures Includes 2SA1036K 2SC411K transistor Abstract: .. Transistors. General purpose transistor dual transistors IMZ4. Features 1 Includes a 2SA1036K and a 2SC411K transistor in a SMT pack-age. 2 Mounting possible with SMT3 auto-matic mounting .. datasheet abstract.. |
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First line: 0.5um 1P3M Logic 3.3V Features Design Rules 0.5um 1P3M Logic 3.3V Electrical Abstract: .. Electrical Parameters-I Transistor Electrical Parameters-II Resistance + +! , -. . . %+, %+ / 0% %+, %+ / 0% % % 1. % % % 1. % .. datasheet abstract.. |
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First line: 3-Lead Thin Shrink Small Outline Transistor Package SC70 KS-3 Dimensions shown millimeters Abstract: .. a 3-Lead Thin Shrink Small Outline Transistor Package [SC70] KS-3 Dimensions shown in millimeters. 1.10 MAX. SEATING PLANE. 0.10 COPLANARITY. 0.10 MAX .. datasheet abstract.. |
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First line: Transistors Medium Power Transistor 32V 1A 2SB1132 2SA1515S 2SB1237 FFeatures VCE sat . VCE sat Abstract: .. Transistors. Medium Power Transistor 32V, 1A 2SB1132 / 2SA1515S / 2SB1237. Features 1 Low VCE sat . VCE sat = 0.2V Typ. IC / I B = ‐500mA / ‐50mA 2 Compliments 2SD1664 / 2SD1858. Structure .. datasheet abstract.. |
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First line: Transistors Power Transistor 60V 3A 2SB1184 2SB1243 2SB1185 FFeatures VCE sat . VCE sat 0.5V Abstract: .. Transistors. Power Transistor 60V, 3A 2SB1184 / 2SB1243 / 2SB1185. Features 1 Low VCE sat . VCE sat = 0.5V Typ. IC / I B = 2A / 0.2A 2 Complements the 2SD1760 / 2SD1864 / 2SD1762. Structure .. datasheet abstract.. |
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First line: Transistors Power Transistor 50V 2SD1760 2SD1864 2SD1762 FFeatures VCE sat VCE sat 0.5V Typ. Abstract: .. Transistors. Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762. Features 1 Low VCE sat , VCE sat = 0.5V Typ. IC / IB = 2A / 0.2A 2 Complements the 2SB1184 / 2SB1243 / 2SB1185. Structure .. datasheet abstract.. |
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First line: Transistors Power Transistor 80V 1A 2SB1260 2SB1181 2SB1241 FFeatures High breakdown voltage Abstract: .. Transistors. Power Transistor 80V, 1A 2SB1260 / 2SB1181 / 2SB1241. Features 1 High breakdown voltage and high current. VCEO = 80V, IC = 1A. 2 Good hFE linearity. 3 Low VCE sat . 4 Complements .. datasheet abstract.. |
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First line: Transistors Frequency Transistor 20V 2SD2150 2SC4115S 2SD2264 FFeatures VCE sat . VCE sat 0.2V Typ. Abstract: .. Transistors. Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264. Features 1 Low VCE sat . VCE sat = 0.2V Typ. IC / I B = 2A / 0.1A 2 Excellent current gain characteris-tics. 3 .. datasheet abstract.. |
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First line: Transistors VCE sat Transistor 20V 3A 2SB1424 2SA1585S FFeatures VCE sat . VCE sat 0.2V Typ. Abstract: .. Transistors. Low VCE sat Transistor 20V, 3A 2SB1424 / 2SA1585S. Features 1 Low VCE sat . VCE sat = 0.2V Typ. IC / IB = 2A / 0.1A 2 Excellent DC current gain charac-teristics. 3 Complements .. datasheet abstract.. |
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First line: Transistors Low-frequency Transistor 80V 0.5A 2SB1198K FFeatures VCE sat . VCE sat 0.2V Typ. 0.5A Abstract: .. Transistors. Low-frequency Transistor 80V, 0.5A 2SB1198K. Features 1 Low VCE sat . VCE sat = 0.2V Typ. IC / I B = 0.5A / 50mA 2 High breakdown voltage. BVCEO = 80V 3 Complements the 2SD1782K .. datasheet abstract.. |
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First line: Transistors Medium Power Transistor 32V 0.8A 2SD1781K FFeatures Very VCE sat . VCE sat Typ. Abstract: .. Transistors. Medium Power Transistor 32V, 0.8A 2SD1781K. Features 1 Very low VCE sat . VCE sat 0.4 V Typ. IC / I B = 500mA / 50mA 2 High current capacity in compact package. 3 Complements .. datasheet abstract.. |
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First line: Transistors Medium Power Transistor 32V 0.5A 2SA1036K 2SA1577 2SA854S FFeatures Large ICMax. Abstract: .. Transistors. Medium Power Transistor 32V, 0.5A 2SA1036K / 2SA1577 / 2SA854S. Features 1 Large IC. ICMax. = 500mA 2 Low VCE sat . Ideal for low-voltage operation. 3 Complements the 2SC2411K .. datasheet abstract.. |
99.21 Kb |
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First line: Transistors General purpose dual digital transistors UMH3N IMH3A FFeatures DTAK13Ts chips package. Abstract: .. Transistors. General purpose dual digital transistors UMH3N / IMH3A. Features 1 Two DTAK13Ts chips in a UMT or SMT package. 2 Mounting possible with UMT3 or SMT3 automatic mounting ma-chines .. datasheet abstract.. |
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First line: Transistors General purpose dual digital transistors UMB3N IMB3A FFeatures DTA143T chips package. Abstract: .. Transistors. General purpose dual digital transistors UMB3N / IMB3A. Features 1 Two DTA143T chips in a UMT or SMT package. 2 Mounting possible with UMT3 or SMT3 automatic mounting ma-chines .. datasheet abstract.. |
48.19 Kb |
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First line: Transistors Medium Power Transistor 32V 0.5A 2SC2411K 2SC4097 2SC1741S FFeatures High Ic Max. Abstract: .. Transistors. Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S. Features 1 High Ic Max. IC Max. = 0.5A 2 Low VCE sat . Ideal for low voltage op-. eration. 3 Complements the .. datasheet abstract.. |
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First line: Transistors General purpose transistor dual transistors IMX17 FFeatures 2SD1484K chips package. Mounting Abstract: .. Transistors. General purpose transistor dual transistors IMX17. Features 1 Two 2SD1484K chips in an SMT package. 2 Mounting possible with SMT3 auto-matic mounting machine. 3 Transistor .. datasheet abstract.. |
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First line: Transistors General purpose transistor isolated dual transistors IMT17 FFeatures 2SA1036K chips package. Abstract: .. Transistors. General purpose transistor isolated dual transistors IMT17. Features 1 Two 2SA1036K chips in an SMT package. 2 Same size as SMT3 package, so same mounting machine can be used for .. datasheet abstract.. |
89.13 Kb |
3 Pages |
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First line: Transistors General purpose transistor dual transistors UMX1N IMX1 FFeatures 2SC2412K chips package. Abstract: .. Transistors. General purpose transistor dual transistors UMX1N / IMX1. Features 1 Two 2SC2412K chips in a UMT or SMT package. 2 Mounting possible with UMT3 or SMT3 automatic mounting ma-chines .. datasheet abstract.. |
110.68 Kb |
3 Pages |
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First line: Transistors General purpose dual digital transistors UMB11N IMB11A FFeatures DTA114Es package. Mounting Abstract: .. Transistors. General purpose dual digital transistors UMB11N / IMB11A. Features 1 Two DTA114Es in a UMT or SMT package. 2 Mounting possible with UMT3 or SMT3 automatic mounting ma-chines. .. datasheet abstract.. |
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First line: 0.6um 2P3M Mixed Signal Features Design Rules 0.6um 2P3M Mixed Signal Electrical Abstract: .. Electrical Parameters-I Transistor Electrical Parameters-II Resistance , -. % -# %. / %0. %0. &-. &-. 1. 2& 133. &-. &-. 1. 2& 133. & & !4. & 3!4. & & !4. & 3!4. !" " ##$ " % %$$ 5. & $$ #$ ’ ’ ’ ’ ’ *#$6 ’ ’ .. datasheet abstract.. |
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First line: Transistors Digital transistor built resistor zener diode Driver 60V1A DTDG14GP FFeatures High Abstract: .. Transistors. Digital transistor built in resistor and zener diode Driver 60V,1A DTDG14GP. Features 1 High hFE, typically hFE = 750 at VCE = 2V at IC = 0.5A. 2 Low saturation voltage, typically .. datasheet abstract.. |
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First line: Central PROCESS DETAILS Size Thickness PROCESS CP178 Semiconductor Corp. Darlington Transistor Power Abstract: .. PROCESS CP178 Power Transistor NPN Darlington Transistor. PRINCIPAL DEVICE TYPES 2N6059. Die Size 131 x 131 MILS. Die Thickness 12.5 ±1.0 MILS. Emitter Bonding Pad Area 27 x 36 MILS. Base Bonding Pad .. datasheet abstract.. |
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First line: Transistors Emitter common dual transistors UMS1N FMS1A FFeatures 2SA1037AK chips package. Mounting Abstract: .. Transistors. Emitter common dual transistors UMS1N / FMS1A. Features 1 Two 2SA1037AK chips in a UMT or SMT package. 2 Mounting cost and area can be cut in half. Structure Epitaxial planar type .. datasheet abstract.. |
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First line: Transistors Emitter common dual digital transistors UMA2N FMA2A FFeatures DTA144E transistors single Abstract: .. Transistors. Emitter common dual digital transistors UMA2N / FMA2A. Features 1 Two DTA144E transistors in a single UMT and a SMT package. 2 Mounting cost and area can be cut in half. Structure .. datasheet abstract.. |
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First line: Transistors Emitter common dual transistors UMW1N FMW1 FFeatures 2SC2412K chips package. Mounting Abstract: .. Transistors. Emitter common dual transistors UMW1N / FMW1. Features 1 Two 2SC2412K chips in a UMT or SMT package. 2 Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN .. datasheet abstract.. |
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First line: DISCONTINUE PRODUCTS Apr.2002 Type NJD6505 / 06 NJD6507 / 08 NJD6511 / 12 / 13 / 14 NJM2104F NJM2105 NJM2204B NJM2219 NJM2220 Abstract: .. NJD6505/06 NPN Transistor Array. NJD6507/08 Transistor Array. NJD6511/12/13/14 Transistor Array NJM2104F System Reset IC. NJM2105 Telephone Speech Network IC NJM2204B Log Amplifier. NJM2219 .. datasheet abstract.. |
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First line: Transistors Emitter common dual digital transistors UMG9N FMG9A FFeatures DTC114E package. Mounting Abstract: .. Transistors. Emitter common dual digital transistors UMG9N / FMG9A. Features 1 Two DTC114E in a UMT or SMT package. 2 Mounting cost and area can be cut in half. Structure Epitaxial planar type .. datasheet abstract.. |
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First line: Transistors Emitter common dual digital transistors UMG2N FMG2A FFeatures DTC144E chips package. Abstract: .. Transistors. Emitter common dual digital transistors UMG2N / FMG2A. Features 1 Two DTC144E chips in a UMT or SMT package. 2 Mounting cost and area can be cut in half. Structure Dual NPN digital .. datasheet abstract.. |
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First line: Transistors Emitter common dual digital transistors UMG3N FMG3A FFeatures DTC143T chips package. Abstract: .. Transistors. Emitter common dual digital transistors UMG3N / FMG3A. Features 1 Two DTC143T chips in a UMT or SMT package. 2 Mounting cost and area can be cut in half. Structure Dual NPN digital .. datasheet abstract.. |
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First line: Transistors Emitter common dual digital transistors UMG8N FMG8A FFeatures DTC143T chips package. Abstract: .. Transistors. Emitter common dual digital transistors UMG8N / FMG8A. Features 1 Two DTC143T chips in a UMT or SMT package. 2 Mounting cost and area can be cut in half. Structure Epitaxial planar .. datasheet abstract.. |
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First line: Transistors Emitter common dual digital transistors UMA9N FMA9A FFeatures DTA114E chips package. Abstract: .. Transistors. Emitter common dual digital transistors UMA9N / FMA9A. Features 1 Two DTA114E chips in a UMT or SMT package. 2 Mounting cost and area can be cut in half. Structure Epitaxial planar .. datasheet abstract.. |
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First line: Transistors Emitter common dual digital transistors UMA11N FMA11A FFeatures DTA143Z chips package. Abstract: .. Transistors. Emitter common dual digital transistors UMA11N / FMA11A. Features 1 Two DTA143Z chips in a UMT or SMT package. 2 Mounting cost and area can be cut in half. Structure Epitaxial planar .. datasheet abstract.. |
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First line: Transistors Medium power Transistor 32V 2A 2SB1188 2SB1182 2SB1240 2SB822 2SB1277 2SB911M FFeatures VCE sat . Abstract: .. Transistors. Medium power Transistor 32V,2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M. Features 1 Low VCE sat . VCE sat = 0.5V Typ. IC / I B = 2A / 0.2A 2 Complements the 2SD1766 .. datasheet abstract.. |
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First line: Transistors Emitter common dual transistors UMY1N FMY1A FFeatures Includes 2SA1037AK 2SC2412K transistor Abstract: .. Transistors. Emitter common dual transistors UMY1N / FMY1A. Features 1 Includes a 2SA1037AK and a 2SC2412K transistor in a single UMT and a SMT package. 2 PNP and NPN transistors have common .. datasheet abstract.. |
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First line: Transistors Medium Power Transistor 32V 2SD1766 2SD1758 2SD1862 2SD1055 2SD1919 2SD1227M FFeatures Abstract: .. Transistors. Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M. Features 1 Low VCE sat . VCE sat = 0.5V Typ. IC / I B = 2A / 0.2A 2 Complements the 2SB1188 .. datasheet abstract.. |
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First line: Transistors General purpose transistor dual transistors UMZ1N IMZ1A FFeatures Both 2SA1037AK chip Abstract: .. Transistors. General purpose transistor dual transistors UMZ1N / IMZ1A. Features 1 Both a 2SA1037AK chip and 2SC241ZK chip in a UMT or SMT package. 2 Mounting possible with UMT3 or SMT3 automatic .. datasheet abstract.. |
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First line: 0.5um 2P3M Mixed Signal Features Design Rules 0.5um 2P3M Mixed Signal Electrical Abstract: .. Electrical Parameters-I Transistor Electrical Parameters-II Resistance Electrical Parameters-III Mixed Signal Process Parameters +! , -./ /% /@ @ @ @ 0. % ,# %#-- +#-- # 123% 4/5. + +! 0 .. datasheet abstract.. |
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First line: 0.35um 2P4M Embedded Flash 3.3V Features LOCOS Surface channel NMOS Abstract: .. Electrical Parameters-I Transistor/Cell Electrical Parameters-II Resistance ,-. ./01. /+ /22. 0 + ,-. ./01. /+ /22. 0 + ’34. ’34. 5. 665. 65. 5. 665. 65. !" # # $ % &’ &’ ’ *+ , -+, $ $ . # Logic Flash Cell .. datasheet abstract.. |
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