2SA1015 datasheet and Application Note, Data Sheet, Circuit, PDF, Pinout

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Datasheet Search Results			1 - 50 of about 52 for 2SA1015
	2SA1015	Continental Device India Limited	Semiconductor Device Data Book 1996	100.65 Kb, 1 Pages.	Price & Availability

	2SA1015	Continental Device India Limited	TO-92 PNP Plastic Package Transistor	44.31 Kb, 1 Pages.	Price & Availability

	2SA1015	Micro Commercial Components	TRANS GP BJT PNP 50V 0.15A 3TO-92	342.32 Kb, 1 Pages.	Price & Availability

	2SA1015	Micro Electronics	Low Level and General Purpose Transistors	112.86 Kb, 1 Pages.	Price & Availability

	2SA1015	Micro Electronics	Semiconductor Device Data Book	62.89 Kb, 1 Pages.	Price & Availability

	2SA1015	Micro Electronics	PNP SILICON TRANSISTOR	73.99 Kb, 1 Pages.	Price & Availability

	2SA1015	Micro Electronics	400mW PNP Silicon Transistor	73.98 Kb, 1 Pages.	Price & Availability

	2SA1015	N/A	The Transistor Manual (Japanese) 1993	120.4 Kb, 2 Pages.	Price & Availability

	2SA1015	N/A	Transistor Substitution Data Book 1993	38.78 Kb, 1 Pages.	Price & Availability

	2SA1015	N/A	The Japanese Transistor Manual 1981	112.43 Kb, 2 Pages.	Price & Availability

	2SA1015	National Semiconductor	Consumer Series Transistors	34.98 Kb, 1 Pages.	Price & Availability

	2SA1015	Toshiba	Silicon PNP transistor for audio frequency general purpose amplifier applications and driver stage amplifier applications	153.46 Kb, 2 Pages.	Price & Availability

	2SA1015	Toshiba	TO-92 Transistors	59.15 Kb, 1 Pages.	Price & Availability

	2SA1015	Toshiba	SILICON PNP EPITAXIAL TYPE TRANSISTOR	176.26 Kb, 3 Pages.	Price & Availability

	2SA1015	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	225.06 Kb, 3 Pages.	Price & Availability

	2SA1015	Usha Ltd.	Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW.	98.92 Kb, 2 Pages.	Price & Availability

	2SA1015GR	Bharat Electronics Ltd	Transistor Selection Guide	54.65 Kb, 1 Pages.	Price & Availability

	2SA1015GR	Continental Device India Limited	Semiconductor Device Data Book 1996	100.65 Kb, 1 Pages.	Price & Availability

	2SA1015GR	Continental Device India Limited	TO-92 PNP Plastic Package Transistor	44.31 Kb, 1 Pages.	Price & Availability

	2SA1015GR	Micro Commercial Components	TRANS GP BJT PNP 50V 0.15A 3TO-92	342.32 Kb, 1 Pages.	Price & Availability

	2SA1015GR	Micro Electronics	400mW PNP Silicon Transistor	73.99 Kb, 1 Pages.	Price & Availability

	2SA1015GR	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	105.91 Kb, 3 Pages.	Price & Availability

	2SA1015-GR	Micro Commercial Components	PNP Silicon Plastic-Encapsulate Transistor	73.17 Kb, 2 Pages.	Price & Availability

	2SA1015GRT	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	225.06 Kb, 3 Pages.	Price & Availability

	2SA1015GRTE2T	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	225.06 Kb, 3 Pages.	Price & Availability

	2SA1015GRTPE2	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	225.06 Kb, 3 Pages.	Price & Availability

	2SA1015(L)	Toshiba	Consumer Series Transistors	176.19 Kb, 3 Pages.	Price & Availability

	2SA1015L	N/A	The Transistor Manual (Japanese) 1993	120.4 Kb, 2 Pages.	Price & Availability

	2SA1015L	Toshiba	TO-92 Transistors	59.15 Kb, 1 Pages.	Price & Availability

	2SA1015L	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS)	150.69 Kb, 2 Pages.	Price & Availability

	2SA1015L	Toshiba	SILICON PNP EPITAXIAL TYPE TRANSISTOR	176.19 Kb, 3 Pages.	Price & Availability

	2SA1015L	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	105.91 Kb, 3 Pages.	Price & Availability

	2SA1015LGR	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	105.91 Kb, 3 Pages.	Price & Availability

	2SA1015LO	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	105.91 Kb, 3 Pages.	Price & Availability

	2SA1015LY	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	105.91 Kb, 3 Pages.	Price & Availability

	2SA1015O	Bharat Electronics Ltd	Transistor Selection Guide	54.65 Kb, 1 Pages.	Price & Availability

	2SA1015O	Continental Device India Limited	Semiconductor Device Data Book 1996	100.65 Kb, 1 Pages.	Price & Availability

	2SA1015O	Continental Device India Limited	TO-92 PNP Plastic Package Transistor	44.31 Kb, 1 Pages.	Price & Availability

	2SA1015O	Micro Commercial Components	TRANS GP BJT PNP 50V 0.15A 3TO-92	342.32 Kb, 1 Pages.	Price & Availability

	2SA1015O	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	226.51 Kb, 3 Pages.	Price & Availability

	2SA1015-O	Micro Commercial Components	PNP Silicon Plastic-Encapsulate Transistor	73.16 Kb, 2 Pages.	Price & Availability

	2SA1015OTE2T	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	225.06 Kb, 3 Pages.	Price & Availability

	2SA1015Y	Bharat Electronics Ltd	Transistor Selection Guide	54.65 Kb, 1 Pages.	Price & Availability

	2SA1015Y	Continental Device India Limited	Semiconductor Device Data Book 1996	100.65 Kb, 1 Pages.	Price & Availability

	2SA1015Y	Continental Device India Limited	TO-92 PNP Plastic Package Transistor	44.31 Kb, 1 Pages.	Price & Availability

	2SA1015Y	Micro Commercial Components	TRANS GP BJT PNP 50V 0.15A 3TO-92	342.32 Kb, 1 Pages.	Price & Availability

	2SA1015Y	Micro Electronics	400mW PNP Silicon Transistor	73.98 Kb, 1 Pages.	Price & Availability

	2SA1015Y	Toshiba	TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)	226.51 Kb, 3 Pages.	Price & Availability

	2SA1015Y	Various Russian Datasheets	Transistor	82.42 Kb, 8 Pages.	Price & Availability

	2SA1015-Y	Micro Commercial Components	PNP Silicon Plastic-Encapsulate Transistor	73.17 Kb, 2 Pages.	Price & Availability

	Datasheets per page: 50 \| 250 \| 500

Contextual Datasheet Results		1 - 50 of about 81 for 2SA1015
	First line: Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR Silicon Plastic-Encapsulate Abstract: .. 2SA1015-O. PNP Silicon Plastic-Encapsulate Transistor. Features • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 50V • Operating and storage .. datasheet abstract..	73.18 Kb	2 Pages

	First line: 2SA1015 L TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Abstract: .. 2SA1015 L 2003-03-27 1. TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Applications Low Noise Amplifier Applications. High voltage and .. datasheet abstract..	105.9 Kb	3 Pages

	First line: 2SA1015 L TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Abstract: .. 2SA1015 L 2003-03-27 1. TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Applications Low Noise Amplifier Applications. • High voltage and .. datasheet abstract..	226.5 Kb	3 Pages

	First line: 2SA1015 TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 Audio Frequency General Abstract: .. 2SA1015. 2003-03-27 1. TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015. Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications. • High .. datasheet abstract..	225.06 Kb	3 Pages

	First line: UNISONIC TECHNOLOGIES 2SA1015 FREQUENCY AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage BVCEO=-50V Collector Current Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2SA1015 PNP SILICON TRANSISTOR. www.unisonic.com.tw 1of 4. Copyright © 2009 Unisonic Technologies Co., LTD QW-R201-004.C. LOW FREQUENCY PNP AMPLIFIER TRANSISTOR .. datasheet abstract..	134.2 Kb	4 Pages

	First line: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock 2SA1015LT1 EPITAXIAL SILICON TRANSISTOR Package SOT-23 TECHNICAL Abstract: .. 2SA1015. –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6. T A = 100°C 25°C – 40°C. –50. –20. –10. –50. –2. –1. –0.5. –0.2. –0.1. 0 –0.4 –0.8 –1.2 –1.6 –2.0. T A = 25°C. –10. –8. –6. –4. –2. 0. I. C. , COLLECTOR CURRENT. mA Fig.1 Grounded emitter .. datasheet abstract..	163.58 Kb	3 Pages

	First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SA1015. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain .. datasheet abstract..	250.07 Kb	2 Pages

	First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SA1015. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain .. datasheet abstract..	230.43 Kb	2 Pages

	First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SA1015. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain .. datasheet abstract..	199.3 Kb	2 Pages

	First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SA1015. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain .. datasheet abstract..	143.18 Kb	2 Pages

	First line: BL9148 General infrared Remote Control Transmitter Description BL9148 CMOS developed general infrared Abstract: .. 2SA1015. 10K. 2SC1815. 10. TLN105 .. datasheet abstract..	22.44 Kb	2 Pages

	First line: Features omponents Marilla Street Chatsworth 2SA1015 Capable 0.4Watts Power Dissipation. Collector-current 0.15A Abstract: .. 2SA1015. PNP Silicon Plastic-Encapsulate Transistor. Features • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 50V • Operating and storage junction .. datasheet abstract..	342.33 Kb	1 Pages

	First line: Type Transistor 2SA1015 Transistors SOT-23 2.9-0.1 0.4-0.1 Unit 2.4-0.1 High voltage high Abstract: .. 2SA1015 .. datasheet abstract..	33.85 Kb	1 Pages

	First line: 2SA1015 EPITAXIAL SILICON TRANSISTOR FREQUENCY AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage BVCEO=-50V Collector Abstract: .. UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-004,A LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage: BVCEO=-50V .. datasheet abstract..*	60.34 Kb	2 Pages

	First line: 2SA1015 EPITAXIAL SILICON TRANSISTOR FREQUENCY AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage BVCEO=-50V Collector Abstract: .. UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-004,B LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage: BVCEO=-50V .. datasheet abstract..*	66.39 Kb	2 Pages

	First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. complementary type the PNP transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx .. datasheet abstract..	248.28 Kb	2 Pages

	First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. complementary type the PNP transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx .. datasheet abstract..	229.17 Kb	2 Pages

	First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g. Absolute Maximum .. datasheet abstract..	234.23 Kb	2 Pages

	First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g. Absolute Maximum .. datasheet abstract..	179.67 Kb	2 Pages

	First line: COMPONENTS LTD. 2SA1015 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS EPITAXIAL PLANAR TRANSISTOR Description Designed Abstract: .. 2SA1015. DISCRETE SEMICONDUCTORS. R. DC COMPONENTS CO., LTD.. TECHNICAL SPECIFICATIONS OF PNP .. datasheet abstract..	208.98 Kb	1 Pages

	First line: 2SA1015 TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 Audio Frequency General Abstract: .. 2SA1015. 2007-11-01 1. TOSHIBA Transistor Silicon PNP Epit axial Type PCT process 2SA1015. Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications. • High .. datasheet abstract..	165.97 Kb	3 Pages

	First line: 2SA1015 L TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Abstract: .. 2SA1015 L 2007-11-01 1. TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Applications Low Noise Amplifier Applications • High voltage and .. datasheet abstract..	167.62 Kb	3 Pages

	First line: THAT Corporation Design Note Fully Adjustable Noise Gate Gates useful suppressing background Abstract: .. Q2 2SA1015. Q3 2SA1015. R3. 20k. R20. 30k. R21. 5k1. R5. 10k. R15 100k. VR4 20k. VR5 20k. V-. V+ V+ V+ V+ V+ Hold Time .. datasheet abstract..	64.86 Kb	2 Pages

	First line: MDT80P10 USB / UART Features This document specifies RS232C communication protocol Advance-Intelligent UPS. Special Abstract: .. Q4 2SA1015. 1 2 3 4. CN2. 1 2 3 4. CN1 USB-F. R3 510. R1 7.5K. R2 2K. C1 104 50V. C2 104 C3 1uF 25V. Q1. PC817. Q2. PC817. X1 .. datasheet abstract..	38.64 Kb	3 Pages

	First line: HONEY TO-92 Transistors Japan Type Equivalent Table Silicon Epitaxial Planar Transistor To-92 Abstract: .. 2SA871 HN / BC 559 / 9015 2SA1015 HN / BC 557 / 9015 2SA1367 HN / BC 557 / 9015. 2SA873 HN / BC 556 / 9015 2SA1025 HN / BC 556 / 9015 2SA1373 HN / BC 556 / 9015. 2SA874 HN / BC 327 / 8550 2SA1026 HN / BC 556 / 9015 2SA1374 .. datasheet abstract..	58.73 Kb	1 Pages

	First line: 2SC1815 EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY TRANSISTOR FEATURES Collector-Emitter Abstract: .. =50V Collector current up to 150mA High hFE linearity complimentary to 2SA1015 TO-92 1 1:EMITTER 2:COLLECTOR 3. BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified .. datasheet abstract..*	59.92 Kb	2 Pages

	First line: 050106DAA1 TOSHIBA CORPORATION Rights Reserved SMD SMD fSM fS6 TESM2 .. TESM .. Abstract: .. 1S1553 1SS193 2SA495 G TM 2SA1015 2SC3302 2SC5087 1S1554 1SS193 2SA1159 2SA1408 2SC3329⎯ 1S1555 1SS193 2SA1164⎯2SC3612 2SC4439 1S1585 1SS193 2SA1195 2SA1408 2SC3667 2SC3668 .. datasheet abstract..	3803.17 Kb	116 Pages

	First line: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock 2SC1815LT1 EPITAXIAL SILICON TRANSISTOR Package SOT-23 TECHNICAL Abstract: .. * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25°C Characteristic Symbol Rating Unit. Collector-Base Voltage Vcbo 60 V. Collector-Emitter Voltage Vceo .. datasheet abstract..	178.4 Kb	3 Pages

	First line: 2SC1815 TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SC1815 Audio Frequency General Abstract: .. Complementary to 2SA1015 O, Y, GR class Maximum Ratings Ta 25°C Characteristics Symbol Rating Unit. Collector-base voltage VCBO 60 V. Collector-emitter voltage VCEO 50 V. Emitter-base voltage .. datasheet abstract..	137.9 Kb	4 Pages

	First line: UNISONIC TECHNOLOGIES 2SC1815 AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY TRANSISTOR FEATURES Collector-Emitter voltage Abstract: .. * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015. Lead-free: 2SC1815L Halogen-free: 2SC1815G. Ñ ORDERING INFORMATION. Ordering Number Pin Assignment. Normal .. datasheet abstract..	205.32 Kb	4 Pages

	First line: 050106DAA1 TOSHIBA CORPORATION Rights Reserved rth 015AZ2.0 015AZ2.2 015AZ2.4 015AZ2.7 015AZ3.0 015AZ3.3 Abstract: .. 1S1553 1SS193 2SA495 G TM 2SA1015 2SC3302 2SC5087 1S1554 1SS193 2SA1159 2SA1408 2SC3329⎯ 1S1555 1SS193 2SA1164⎯2SC3612 2SC4439 1S1585 1SS193 2SA1195 2SA1408 2SC3667 2SC3668 .. datasheet abstract..	2640.04 Kb	154 Pages

	First line: Micro Commercial Components Small Signal Transistor Cross Reference Group Package SOT-23 PACKAGE Abstract: .. 2SA1015 400 -150 -50 -50 -0.1 -60 70 400 -2 -6 -0.3 -100 -10 80 2SA1015 2SC1815 400 150 60 50 0.1 60 70 700 2 6 0.25 100 10 80 2SC1815 2SC945 400 150 60 50 0.1 60 70 700 1 6 0.3 100 10 150 2SC945 MMBT3904 200 .. datasheet abstract..	28.02 Kb	4 Pages

	First line: UNISONIC TECHNOLOGIES 2SC1815 EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY TRANSISTOR Abstract: .. * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015. TO-92. 1. Pb-free plating product number: 2SC1815L. ORDERING INFORMATION. Order Number Pin Assignment. Normal .. datasheet abstract..*	158.15 Kb	4 Pages

	First line: SC9148 CMOS SC9148A SOP-16 Vcc=2.2 ~5.0V DIP-16 CMOS SC9148A SC9148S SC9148 DIP-16 Abstract: .. 2SA1015. 2SC1815. 10k. 10. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. K1~K6. T1~T3. 47μF. TLN105 .. datasheet abstract..	269.49 Kb	8 Pages

	First line: 2SA1015 2SA1015 2SC1815 Abstract: .. 2SA1015 2007-11-01 1 東芝ランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1015 ○低周波増幅用○励振段増幅用 •高耐圧でしかも電流容量が大きい。 :VCEO .. datasheet abstract..	211.33 Kb	3 Pages

	First line: 2SA1015 L 2SA1015 L 2SC1815 L Abstract: .. 2SA1015 L 2007-11-01 1 東芝ランジスタシリコンPNPエピタキシャル PCT方式 2SA1015 L ○低周波増幅用○励振段増幅用•高耐圧で、しかも電流容量が .. datasheet abstract..	211.34 Kb	3 Pages

	First line: Abstract: .. 2SA1015 -50 -5 -150 400 125 70-240 -6 -2 >80* 4 2SC1815. 2SA1016 -120 -5 -50 400 125. 160-960. -6 -1 110* 2.2 2SC2362. 2SA1017 -120 -5 -50 500 125. 100-560. -6 -1 110* 2.2 2SC2363. 2SA1018 -250 -5 -70 750 150 30 .. datasheet abstract..	86.73 Kb	3 Pages

	First line: Abstract: .. 2SC1815 60 5 150 400 125 70-700 6 2 >80* 2 2SA1015. 2SC1816 100 6 4A 16W Tc=25oC 150 100 2 100 140* 45. 2SC1817 45 4 5A 25W Tc=25oC 150 60 2 100 250* 80. 2SC1818 130 5 7A. 100W. Tc=25oC 150 150 5 7A 7* 400. 2SC1819 .. datasheet abstract..	87.36 Kb	3 Pages

	First line: 2SC1815 TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SC1815 Audio Frequency General Abstract: .. at f = 1 kHz • Complementary to 2SA1015 O, Y, GR class Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO .. datasheet abstract..	249.01 Kb	4 Pages

	First line: 2SC1815 L TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SC1815 L Audio Frequency Voltage Abstract: .. • Complementary to 2SA1015 L . O, Y, GR class . Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO .. datasheet abstract..	247.67 Kb	4 Pages

	First line: Silan Semiconductors INFRARED REMOTE CONTROL TRANSMITTER DESCRIPTION SC9148B CMOS developed infrared remote Abstract: .. 2SA1015. 2SC1815. 10k. 10. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. KEY MATRIX. K1~K6. T1~T3. 47 .. datasheet abstract..	80.42 Kb	9 Pages

	First line: Small Signal Transistors Reference Guide response continuous market demand enlarging product portfolio Abstract: .. 2SA1015 2N3906 1 2SA1037 BC857B 2 2SA1767 BF421. 2SA1774 BC857BW 2 2SA673 PN2907A 1 2SA733 BC557B 1 2SB1132 STF2907A. 2SB647 STX817 3 2SB709AR BC857B 2 2SC1213 BC337-25 1 2SC1573A .. datasheet abstract..	183.27 Kb	8 Pages

	First line: CXA3176N Amplifier Receiver AFC Supported Description CXA3176N current consumption amplifier which employs Abstract: .. 2SA1015. TOSHIBA CORPORATION Vceo Ic Pc Hfe fc. ‐50 V ‐150 m 400 m 70 to 400 80 M. 21.245 MHz XTAL. NR-18BN. NIHON DEMPA KOGYO CO., LTD. CERAFIL. CFWS450D. MURATA PRODUCTS 450 kHz 1.5 kTM. DISC. CDBC450CX50 .. datasheet abstract..	373.75 Kb	21 Pages

	First line: Silan Semiconductors REMOTE CONTROL DESCRIPTION SC2128C high performance electronic controller Speed control Abstract: .. 2SA1015. 0.1f. -5V. 13 12 NC LORD. 1k. Supply Circuit. Silan Semiconductors SC2128C. HANGZHOU SILAN .. datasheet abstract..	519.18 Kb	13 Pages

	First line: CXA3176N Amplifier Receiver AFC Supported availability this product please contact sales office. Abstract: .. 2SA1015. TOSHIBA CORPORATION Vceo Ic Pc Hfe fc. ‐50 V ‐150 m 400 m 70 to 400 80 M. 21.245 MHz XTAL. NR-18BN. NIHON DEMPA KOGYO CO., LTD. CERAFIL. CFWS450D. MURATA PRODUCTS 450 kHz 1.5 kTM. DISC. CDBC450CX50 .. datasheet abstract..	311.11 Kb	21 Pages

	First line: CXA3176N Amplifier Receiver AFC Supported Description CXA3176N current consumption amplifier which employs Abstract: .. 2SA1015. TOSHIBA CORPORATION Vceo Ic Pc Hfe fc. ‐50 V ‐150 m 400 m 70 to 400 80 M. 21.245 MHz XTAL. NR-18BN. NIHON DEMPA KOGYO CO., LTD. CERAFIL. CFWS450D. MURATA PRODUCTS 450 kHz 1.5 kTM. DISC. CDBC450CX50 .. datasheet abstract..	313.9 Kb	21 Pages

	First line: 2SC1815 2SC1815 2SA1015 Abstract: .. :NF=1 dB 標準 f=1 kHz •2SA1015とコンプリメンタリになります。 O,Y,GRクラス絶対最大定格 Ta=25°C 項目記号定格単位コレクタベース .. datasheet abstract..	185.11 Kb	4 Pages

	First line: 2SC1815 L 2SC1815 L 2SA1015 L O Abstract: .. :NF 2 =0.2 dB 標準 f=1 kHz •2SA1015 L とコンプリメンタリになります。 O,Y,GRクラス絶対最大定格 Ta=25°C 項目記号定格単 .. datasheet abstract..	186.77 Kb	5 Pages

	First line: Silan Semiconductors REMOTE CONTROL DESCRIPTION SC2128A high performance electronic controller Speed control Abstract: .. 2SA1015. 0.1μf. -5V. Supply Circuit. Silan Semiconductors SC2128A. HANGZHOU SILAN .. datasheet abstract..	217.07 Kb	15 Pages

	First line: Design Example Report Title Specification Application Author Document Number Date Revision Power Abstract: .. 20 1 Q1 PNP Transistor 2SA1015 PNP 21 1 Q3 NPN Transistor 2SC1815 NPN 22 3 R1,R27,R28 47R / 0805. 23 1 R3 200R / 0.5W. 24 1 R4 68K / 0.5W. 25 2 R6,R7 1K / 1206. 26 2 R8,R19 100K / 0805. 27 2 R9,R11 10K / 0805. 28 1 .. datasheet abstract..	621.74 Kb	25 Pages

	Datasheets per page: 50 \| 250 \| 500

Specsheet Results
	2SA1015	N/A	Silicon PNP	Specification

	2SA1015	N/A	Low Power, General Purpose	Specification

	2SA10150	Continental Device India Limited	Si PNP Lo-Pwr BJT	Specification

	2SA1015BL	Toshiba	Si PNP Lo-Pwr BJT	Specification

	2SA1015L	N/A	Low Power, Low Noise, General Purpose	Specification

	2SA1015LBL	N/A	Si PNP Lo-Pwr BJT	Specification

	2SA1015L-G	N/A	Low Power, Low Noise, General Purpose	Specification

	2SA1015LGR	N/A	Si PNP Lo-Pwr BJT	Specification

	2SA1015LO	N/A	Si PNP Lo-Pwr BJT	Specification

	2SA1015L-O	N/A	Low Power, Low Noise, General Purpose	Specification

	2SA1015LT1	N/A	PNP Transistor	Specification

	2SA1015LY	N/A	Si PNP Lo-Pwr BJT	Specification

	2SA1015L-Y	N/A	Low Power, Low Noise, General Purpose	Specification

	2SA1015O	N/A	Si PNP Lo-Pwr BJT	Specification

Cross References
	2SA1015	Cross References (220)

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