2N3906 datasheet and Application Note, Data Sheet, Circuit, PDF, Pinout

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Datasheet Search Results			1 - 50 of about 120 for 2N3906
	2N3906	Allegro MicroSystems, Inc.	General Purpose Bipolar Transistor, PNP, 40 MinV, TO-92, 3-Pin	370.92 Kb, 5 Pages.	Price & Availability

	2N3906	AUK Corp.	PNP Silicon Transistor (General small signal application Switching application)	51.74 Kb, 3 Pages.	Price & Availability

	2N3906	Central Semiconductor	Low Noise Level Amp / Oscillator / Switching Transistors	295.96 Kb, 3 Pages.	Price & Availability

	2N3906	Central Semiconductor	Small Signal Transistors	54.3 Kb, 1 Pages.	Price & Availability

	2N3906	Continental Device India Limited	PNP SILICON PLANAR SWITCHING TRANSISTORS	77.27 Kb, 4 Pages.	Price & Availability

	2N3906	Crimson Semiconductor	Transistor Selection Guide	1453.37 Kb, 36 Pages.	Price & Availability

	2N3906	Diodes, Inc.	TRANS GP BJT PNP 40V 0.1A 3TO-92	61.48 Kb, 3 Pages.	Price & Availability

	2N3906	Diotec Semiconductor	Si-Epitaxial PlanarTransistors	36.11 Kb, 2 Pages.	Price & Availability

	2N3906	Fairchild Semiconductor	PNP small signal general purpose amplifier & switch.	354.01 Kb, 10 Pages.	Price & Availability

	2N3906	Fairchild Semiconductor	PNP General Purpose Amplifier	48.02 Kb, 6 Pages.	Price & Availability

	2N3906	Fairchild Semiconductor	TRANS GP BJT PNP 40V 0.2A 3TO-92 BULK	90.1 Kb, 6 Pages.	Price & Availability

	2N3906	Fairchild Semiconductor	General Purpose Bipolar Transistor, PNP, 40V, TO-92, 3-Pin	636.17 Kb, 16 Pages.	Price & Availability

	2N3906	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	51.59 Kb, 1 Pages.	Price & Availability

	2N3906	Ferranti Semiconductors	Quick Reference Guide 1985	284.14 Kb, 7 Pages.	Price & Availability

	2N3906	Ferranti Semiconductors	E-Line Transistors 1977	148.2 Kb, 4 Pages.	Price & Availability

	2N3906	General Electric	Semiconductor Data Handbook 1977	1706.56 Kb, 7 Pages.	Price & Availability

	2N3906	General Electric Solid State	Planar epitaxial PNP Silicon Transistor. -40V, 200mA.	105.11 Kb, 3 Pages.	Price & Availability

	2N3906	General Semiconductor, Inc.	SMALL SIGNAL TRANSISTORS (PNP)	111.86 Kb, 3 Pages.	Price & Availability

	2N3906	General Semiconductor, Inc.	General Purpose Bipolar Transistor, PNP, 40V, TO-92, 3-Pin	73.13 Kb, 3 Pages.	Price & Availability

	2N3906	Honey Technology	40 V, PNP silicon expitaxial planar transistor	168.97 Kb, 3 Pages.	Price & Availability

	2N3906	Korea Electronics	Switching Transistor	195.28 Kb, 2 Pages.	Price & Availability

	2N3906	Korea Electronics	V(ceo): 40V I(c): 200mA P(c): 625mW NPN Silicon Transistor	495.64 Kb, 5 Pages.	Price & Availability

	2N3906	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	185.89 Kb, 2 Pages.	Price & Availability

	2N3906	Korea Electronics	TRANS GP BJT PNP 40V 0.2A 3TO-92	49.83 Kb, 4 Pages.	Price & Availability

	2N3906	Micro Commercial Components	PNP General Purpose Amplifier	91.52 Kb, 4 Pages.	Price & Availability

	2N3906	Micro Commercial Components	PNP General Purpose Amplifier	102.64 Kb, 4 Pages.	Price & Availability

	2N3906	Micro Electronics	Semiconductor Devices	88.33 Kb, 1 Pages.	Price & Availability

	2N3906	Micro Electronics	PNP SILICON PLANAR EPITAXIAL TRANSISTORS	113.09 Kb, 2 Pages.	Price & Availability

	2N3906	Micro Electronics	Semiconductor Device Data Book	61.82 Kb, 1 Pages.	Price & Availability

	2N3906	Motorola	The European Selection Data Book 1976	70.96 Kb, 2 Pages.	Price & Availability

	2N3906	Motorola	European Master Selection Guide 1986	52.95 Kb, 1 Pages.	Price & Availability

	2N3906	Motorola / Freescale Semiconductor	PNP Silicon General Purpose Transistor	226.28 Kb, 5 Pages.	Price & Availability

	2N3906	National Semiconductor	PNP Transistor	416.99 Kb, 11 Pages.	Price & Availability

	2N3906	National Semiconductor	PNP General Purpose Amplifier	192.65 Kb, 6 Pages.	Price & Availability

	2N3906	On Semiconductor	General Purpose Transistors(PNP Silicon)	145.58 Kb, 6 Pages.	Price & Availability

	2N3906	On Semiconductor	General Purpose Transistors PNP Silicon	78.13 Kb, 7 Pages.	Price & Availability

	2N3906	On Semiconductor	TRANS GP BJT PNP 40V 0.2A 3TO-92 BULK	95.56 Kb, 8 Pages.	Price & Availability

	2N3906	PanJit Semiconductors	PNP GENERAL PURPOSE SWITCHING TRANSISTOR	153.54 Kb, 4 Pages.	Price & Availability

	2N3906	Philips Semiconductors / NXP Semiconductors	Small-signal Transistors	4.25 Kb, 1 Pages.	Price & Availability

	2N3906	Philips Semiconductors / NXP Semiconductors	Silicon Planar Epitaxial Transistor	63.11 Kb, 3 Pages.	Price & Availability

	2N3906	Philips Semiconductors / NXP Semiconductors	Silicon Planar Epitaxial Transistor	224.47 Kb, 4 Pages.	Price & Availability

	2N3906	Philips Semiconductors / NXP Semiconductors	PNP switching transistor	47.3 Kb, 8 Pages.	Price & Availability

	2N3906	Raytheon Company	Selection Guide 1977	46.68 Kb, 1 Pages.	Price & Availability

	2N3906	ROHM Electronics	PNP General Purpose Transistor	167.33 Kb, 4 Pages.	Price & Availability

	2N3906	ROHM Electronics	TRANS GP BJT PNP 40V 0.2A 3TO-92	176.3 Kb, 5 Pages.	Price & Availability

	2N3906	Semiconductors, Inc.	High Speed Switching Transistors	232.64 Kb, 3 Pages.	Price & Availability

	2N3906	Semtech	NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications	168.95 Kb, 3 Pages.	Price & Availability

	2N3906	Siemens Semiconductors	Cross Reference Guide 1998	26.71 Kb, 7 Pages.	Price & Availability

	2N3906	Sinyork Co., Ltd.	Mini size of Discrete semiconductor elements	494.27 Kb, 15 Pages.	Price & Availability

	2N3906	Sprague	Semiconductor Data Book 1977	82.55 Kb, 1 Pages.	Price & Availability

	Datasheets per page: 50 \| 250 \| 500

Contextual Datasheet Results		1 - 50 of about 10000+ for 2N3906
	First line: 2N3905 2N3906 Version 2004-01-20 Switching Transistors Si-Epitaxial PlanarTransistors Power dissipation Verlustleistung Plastic Abstract: .. 2N3905, 2N3906 Switching Transistors PNP Si-Epitaxial PlanarTransistors PNP Version 2004-01-20 Power dissipation – Verlustleistung 625 mW Plastic case TO-92 Kunststoffgehäuse .. datasheet abstract..	36.11 Kb	2 Pages

	First line: Small Signal Transistor PROCESS CP792 Amp / Switch Transistor Chip PROCESS DETAILS Process Size Abstract: .. PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMPT3906E CMST3906 CXT3906 CZT3906. GEOMETRY. PROCESS DETAILS. BACKSIDE COLLECTOR. R0 06 -April 2004 Process EPITAXIAL PLANAR. Die .. datasheet abstract..	71.54 Kb	1 Pages

	First line: Semiconductor 2N3906 Silicon Transistor Descriptions General small signal application Switching application Features Abstract: .. 2N3906 PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary .. datasheet abstract..	51.75 Kb	3 Pages

	First line: 2N3905 2N3906 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3905 / 2N3906. PNP Silicon Epitaxial Planar Transistor. for switching and amplifier applications. As complementary types the NPN trans istors. 2N3903 and 2N3904 are recommended. On special .. datasheet abstract..	164.22 Kb	3 Pages

	First line: 2N3906 General Purpose Transistors TO-92 EMITTER BASE COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25 Abstract: .. 2N3906. WEITRON http://www.weitron.com.tw. IC= -10 mAdc, VCE=-1.0 Vdc IC= -50 mAdc, VCE= 1.0 Vdc DC Current Gain. DC Current Gain. 100 400 1 2 60. -0.3. -0.95. - Classification of hFE 1 Rank .. datasheet abstract..	470.79 Kb	4 Pages

	First line: Combo Keyboard Rev Description Value 100n ECAP ECAP Resistor Resistor Resistor Resistor Abstract: .. PNP TRANSISTOR 1 2N3906 Q1. MC68HC908JB8 1 QFP44 U1. CRYSTAL 1 6MHz X1. 4-PIN HEADER 2 2.54mm J2 J7. 5-PIN HEADER 1 2.54mm J3. 8-PIN HEADER 1 2.54mm J4. 9-PIN HEADER 2 2.54mm J5-6. 4-PIN HEADER 1 2.54mm J1. DIP .. datasheet abstract..	5.68 Kb	1 Pages

	First line: 2N3905 2N3906 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3905 / 2N3906. PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN trans istors. ST 2N3903 and ST 2N3904 are recommended. On .. datasheet abstract..	284.29 Kb	5 Pages

	First line: 2N3905 2N3906 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3905 / 2N3906. PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN trans istors. ST 2N3903 and ST 2N3904 are recommended. On .. datasheet abstract..	277.92 Kb	5 Pages

	First line: Abt. Allg. Elektrotechnik Mikroelektronik Lares Programmer PC Circuit Diagram 1N4004 Power CON2 Abstract: .. 2N3904 2N3906. E B C. BC516 BC517. C B E. D3 D4 0V +5V +13.5V 0 0 0 1 0. 1 0 0 0 1. 0 1 1 0 0. 1 1 1 0 0. LED Logic. C11 10μF .. 2N3906. T5. BC517. T6. BC517. T7. BC517. T9. BC517. T8. 2N3904. R15 680Ω. R16 47K5Ω. D7 1N4148. adjust for. BUSY. 11 .. datasheet abstract..	36.73 Kb	1 Pages

	First line: PROCESS CP592V Small Signal Transistors Amp / Switch Transistor Chip PROCESS DETAILS Process Size Abstract: .. PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CXT3906 CZT3906. Process EPITAXIAL PLANAR. Die Size 12 x 20 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 3.6 X 3.6 MILS. Emitter .. datasheet abstract..	188.32 Kb	2 Pages

	First line: PROCESS Small Signal Transistor Amp / Switch Transistor Chip CP592 Central Semiconductor Corp. PROCESS Abstract: .. PRINCIPAL DEVICE TYPES 2N3906 CMPT3906 CMST3906 CXT3906 CZT3906. Process EPITAXIAL PLANAR. Die Size 12 x 20 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 3.6 X 3.6 MILS. Emitter Bonding Pad Area .. datasheet abstract..	206.4 Kb	2 Pages

	First line: PROCESS CP792V Small Signal Transistor Amp / Switch Transistor Chip Central Semiconductor Corp. PROCESS Abstract: .. PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMPT3906E CMST3906 CXT3906 CZT3906. GEOMETRY. PROCESS DETAILS. BACKSIDE COLLECTOR. R1 15 -April 2005 Process EPITAXIAL PLANAR. Die .. datasheet abstract..	127.18 Kb	2 Pages

	First line: Application Note Layout Power Control ARA05050 RELEVANT PRODUCTS ARA05050 impedance practical. Pins Abstract: .. Q1: 2N3906 Q2: 2N3904. @ #$%% * #$%% 3%0405. 4.%0046. $=$. #:E"F& 7 $/"C0@@C’ 7 $/"C0@@C’$2 .. datasheet abstract..*	1335.82 Kb	8 Pages

	First line: PROCESS CP592V Small Signal Transistors Amp / Switch Transistor Chip PROCESS DETAILS Process Size Abstract: .. PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CXT3906 CZT3906. Process EPITAXIAL PLANAR. Die Size 12 x 20 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 3.6 X 3.6 MILS. Emitter .. datasheet abstract..	231.28 Kb	2 Pages

	First line: 2N3906 SMALL SIGNAL TRANSISTOR PRELIMINARY DATA Ordering Code 2N3906 2N3906-AP Marking 2N3906 Abstract: .. 2N3906. SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR NPN. TRANSISTOR ■ TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE NPN COMPLEMENTARY TYPE IS. 2N3904. APPLICATIONS .. datasheet abstract..	59.77 Kb	5 Pages

	First line: 2N3905 2N3906 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3905 / 2N3906. PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN trans istors. ST 2N3903 and ST 2N3904 are recommended. On special .. datasheet abstract..	418.31 Kb	5 Pages

	First line: 2N3905 2N3906 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3905 / 2N3906. PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN trans istors. ST 2N3903 and ST 2N3904 are recommended. On .. datasheet abstract..	346.05 Kb	5 Pages

	First line: 2N3906 MMBT3906 SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features Epitaxial Planar Construction Available Abstract: .. 2N3906 / MMBT3906 PNP SMALL SIGNAL TRANSISTORS. Features. • Epitaxial Planar Die Construction • Available in Both Through-Hole and Surface Mount Packages • Suitable for Switching and Amplifier .. datasheet abstract..	50.68 Kb	3 Pages

	First line: Notification Date June Process Change Notice Parts Affected Chip processes CP192V NPN Abstract: .. 2N3906 CMPT3906 CMPT3906E CMST3906. CMUT3906 CMXT3906 CMXT3946 CXT3906. CZT3906 MMPQ3906 MMPQ6700 MPQ3906. MPQ6700 2N3251. CP592-CEN1085-CT CP592-CEN1085-WN CP592-CMPT3906-CT CP592-CMPT3906 .. datasheet abstract..	92.76 Kb	2 Pages

	First line: 2N3906 Vishay Semiconductors Small Signal Transistor PNP Features Silicon Epitaxial Planar Transistor Abstract: .. 2N3906 2N3906-BULK or 2N3906-TAP Bulk / Ammopack. Parameter Test condition Symbol Value Unit. Collector - emitter voltage - VCEO 40 V. Collector - base voltage - VCBO 40 V. Emitter - base voltage - VEBO .. datasheet abstract..	99.64 Kb	6 Pages

	First line: Transistors SPEC-A38 Transistors FElectrical characteristic curves UMT3906 / SST3906 / MMST3906 / 2N3906 Transistors FElectrical characteristic curves UMT3906 / SST3906 / MMST3906 / 2N3906 Abstract: .. Transistors UMT3906/SST3906/MMST3906/2N3906. Electrical characteristic curves. 611. Transistors UMT3906/SST3906/MMST3906/2N3906. Electrical characteristic curves. 612. Transistors .. datasheet abstract..	176.29 Kb	5 Pages

	First line: 2N3906 Elektronische Bauelemente RoHS Compliant Product suffix specifies halogen lead-free Silicon General Abstract: .. Elektronische Bauelemente. 2N3906 PNP Silicon General Purpose Transistor. TO-92. î FEATURES . Power Dissipation PCM: 625 mW Ta=25 : . Collector Current ICM: -200 mA. . Collector - Base Voltage .. datasheet abstract..	64.67 Kb	3 Pages

	First line: LM2940-5.0 24LC16B 4.7K 2N3904 RTCC PBASIC2 / P MCLR OSC1 OSC2 Resonator Vout MN13811 Abstract: .. 2N3906. Q1. 2N3904. Q2. 2N3904. 10K 10K. 2. 1. 3. U3. MN13811. R1. 4.7 K. R2. 4.7K. RA0. 6. RA1. 7. RA2. 8. RA3. 9. RB0. 10. RB1. 11 .. datasheet abstract..	12.71 Kb	1 Pages

	First line: 2N3906 2N3906 Version 2006-09-12 Power dissipation Verlustleistung Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistoren Abstract: .. 2N3906 PNP Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistoren PNP Version 2006-09-12 Dimensions - Maße [mm] Power dissipation Verlustleistung .. datasheet abstract..	94.53 Kb	2 Pages

	First line: 6-21-05 Rev. LM2698 Array Driver 33µH 0.75A 10µF FSLCT LM2698 SHDN Theory Abstract: .. Q1-8 2N3906 PNP SOT-23. 40V 200mA. 8 Various. D1 SS12. Schottky Diode. SMA. 20V 1A. 1 Vishay. L1. SLF7032T .. datasheet abstract..	77.7 Kb	1 Pages

	First line: 2N3906 SMALL SIGNAL TRANSISTOR PRELIMINARY DATA Type 2N3906 Marking 2N3906 SILICON EPITAXIAL Abstract: .. 2N3906. SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR NPN. TRANSISTOR ■ TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE NPN COMPLEMENTARY TYPE IS. 2N3904. APPLICATIONS .. datasheet abstract..	37.49 Kb	4 Pages

	First line: 2N3906 SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Construction Available Both Through-Hole Surface Abstract: .. 2N3906. PNP SMALL SIGNAL TRANSISTOR. Features Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier. Applications .. datasheet abstract..	61.48 Kb	3 Pages

	First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 2N3905 / D General Purpose Transistors Silicon Abstract: .. 2N3906. IC = 1.0 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 10 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 50 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 100 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. hFE. 30 60. 40 80. 50 100. 30 .. datasheet abstract..	198.4 Kb	6 Pages

	First line: 2N3906 2N3906 MMBT3906 MMPQ3906 PZT3906 Discrete POWER Signal Technologies MMBT3906 TO-92 SOT-23 Abstract: .. 2N3906 / MMBT3906 / MMPQ3906 / PZT3906. N. Discrete POWER & SignalTechnologies. PNP General Purpose Amplifier. This device is designed for general purpose amplifier and switch-ing applications .. datasheet abstract..	94.42 Kb	5 Pages

	First line: 2N3906 MMBT3906 MMPQ3906 PZT3906 Discrete POWER Signal Technologies 2N3906 MMBT3906 TO-92 SOT-23 Abstract: .. 2N3906 / MMBT3906 / MMPQ3906 / PZT3906. PNP General Purpose Amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 μA to 100 mA. .. datasheet abstract..	149.71 Kb	5 Pages

	First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 2N3905 / D General Purpose Transistors Silicon Abstract: .. 2N3906. IC = 1.0 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 10 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 50 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 100 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. hFE. 30 60. 40 80. 50 100. 30 .. datasheet abstract..	145.59 Kb	6 Pages

	First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 2N3905 / D General Purpose Transistors Silicon Abstract: .. 2N3906 / MMBT3906 / PZT3906. PNP General Purpose Amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 μA to 100 mA. Sourced from .. datasheet abstract..	167.14 Kb	12 Pages

	First line: PRODUCT PRODUCT PRODUCT 2N3906 SMALL SIGNAL TRANSISTORS PNP TO-92 min. FEATURES Silicon Abstract: .. 2N3906. SMALL SIGNAL TRANSISTORS PNP FEATURES. ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the NPN transistor 2N3904 is recommended .. datasheet abstract..	111.87 Kb	3 Pages

	First line: 2N3906 Small Signal Transistor PNP TO-226AA TO-92 min. Features Silicon Epitaxial Planar Abstract: .. 2N3906. Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor. 2N3904 is recommended .. datasheet abstract..	73.14 Kb	3 Pages

	First line: 2N3906 EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES Collector-Emitter Voltage VCEO=40V Collector Abstract: .. UTC 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-028,A. GENERAL PURPOSE APPLIATION. FEATURES Collector-Emitter Voltage: VCEO=40V Collector Dissipation .. datasheet abstract..	102.07 Kb	3 Pages

	First line: 2N3906 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation Tamb=25 Collector current -0.2 Abstract: .. TO-92 Plastic-Encapsulate Transistors Transistor PNP 2N3906. FEATURES. Power dissipation P :0.625 W Tamb=25 C Collector current I :-0.2 A. Collector-base voltage V :-40 V. Operating and storage .. datasheet abstract..	156.59 Kb	2 Pages

	First line: UMT3906 / SST3906 / MMST3906 / 2N3906 Transistors General Purpose Transistor UMT3906 SST3906 MMST3906 2N3906 Features BVCEO -40V Abstract: .. UMT3906/SST3906/MMST3906/2N3906 Transistors. Rev.A 1/4. PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 / 2N3906. z Features 1 BVCEO > −40V IC= −1mA 2 Complements the T3904/SST3904 .. datasheet abstract..	143.21 Kb	5 Pages

	First line: UMT3906 SST3906 MMST3906 2N3906 Transistors General Purpose Transistor UMT3906 SST3906 MMST3906 2N3906 Abstract: .. UMT3906 / SST3906 / MMST3906 / 2N3906. Transistors. PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 / 2N3906. !Features 1 BVCEO < -40V IC=-1mA 2 Complements the UMT3904 / SST3904 .. datasheet abstract..	87.61 Kb	4 Pages

	First line: THAT Corporation Design Note Alternate Method Indicating Compression Indicating above-threshold condition with Abstract: .. Q2 2N3906. R3 10k. Compression Indicator. OA1Output. Figure3.Compressionindicatorwith .. datasheet abstract..	47.76 Kb	3 Pages

	First line: 2N3906 EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES Collector-Emitter Voltage VCEO=40V Collector Abstract: .. UTC 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-028,A. GENERAL PURPOSE APPLIATION. FEATURES Collector-Emitter Voltage: VCEO=40V Collector Dissipation .. datasheet abstract..	137.41 Kb	2 Pages

	First line: 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 PZT3906 TO-92 SOT-23 Mark SOT-223 General Purpose Abstract: .. 2N3906 MMBT3906 PZT3906. PD Total Device Dissipation. Derate above 25°C. 625 5.0. 350 2.8. 1,000 8.0. mW mW/°C. RθJC Thermal Resistance, Junction to Case 83.3 °C/W. RθJA Thermal Resistance, Junction .. datasheet abstract..	90.11 Kb	6 Pages

	First line: 2N3906 Preferred Device General Purpose Transistors Silicon COLLECTOR Symbol VCEO VCBO Abstract: .. 2N3906 Preferred Device. General Purpose Transistors PNP Silicon. MAXIMUM RATINGS. Rating Symbol Value Unit. Collector‐Emitter Voltage VCEO 40 Vdc. Collector‐Base Voltage VCBO 40 Vdc. Emitter .. datasheet abstract..	95.57 Kb	8 Pages

	First line: Features omponents Marilla Street Chatsworth 2N3906 Through Hole Package Capable 600mWatts Power Abstract: .. 2N3906. DC Current Gain vs Collector Current. hFE. IC mA 40. 80. 120. 160. 200. 220. 0.1 1 10 100. Base-Emitter ON Voltage vs Collector Current. VBE ON - V IC - mA 0. 0.2. 0.4. 0.6. 0.8. 1.0. 1.2. 0.1 1.0 10 100. Collector .. datasheet abstract..	102.64 Kb	4 Pages

	First line: SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N3906 EPITAXIAL PLANAR TRANSISTOR Abstract: .. 2N3906. * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2002. 9. 12 3/4. 2N3906. Revision No : 2. C. 0. COLLECTOR CURRENT I mA COLLECTOR CURRENT I mA 0. C. 0. BASE-EMITTER VOLTAGE V V BE. BE C I - V. 10. DC CURRENT .. datasheet abstract..	49.83 Kb	4 Pages

	First line: Features omponents Itasca Street Chatsworth 2N3906 Through Hole Package Capable 600mWatts Power Abstract: .. 2N3906. DC Current Gain vs Collector Current. hFE. IC mA 40. 80. 120. 160. 200. 220. 0.1 1 10 100. Base-Emitter ON Voltage vs Collector Current. VBE ON - V IC - mA 0. 0.2. 0.4. 0.6. 0.8. 1.0. 1.2. 0.1 1.0 10 100. Collector .. datasheet abstract..	91.52 Kb	4 Pages

	First line: SPECIFICATION NOTICE LT1166 November1997 application circuit Figure 100W Audio Amplifier LT1166 data Abstract: .. 2N3906. R11 100TM. R3 10k. ‐ + U2. LT1363. 7. 6. 4. 3. 2. C2 470pF. R2 100TM. R1 100TM. C4. 20pF. C3 470pF. C. B. A. R24 2.4k .. datasheet abstract..	98.99 Kb	1 Pages

	First line: STMicroelectronics EVALPRACTISPIN Quantity Reference C3C5 Part Description 0.1uF ceramic capacitor 0.01uF ceramic Abstract: .. 1 Q1 transistor 2N3906 STMicroelectronics TH. 1 R1 470k 5% 1/4W resistor ERD-S2TJ474V PANASONIC AXIAL TH. 1 R2 10k 5% 1/4W resistor ERD-S2TJ103V PANASONIC AXIAL TH. 1 R18 50k pot resistor 3386P-1 .. datasheet abstract..	6.94 Kb	1 Pages

	First line: Menlo Drive Suite Rocklin Office 624-8333 Fax 624-8003 General Technical Site www.parallax.com Abstract: .. & 2N3906 .. datasheet abstract..	411.79 Kb	1 Pages

	First line: BS2p24-IC MODULE Dual Trans. Pack 10K Res. 2N3904 Single Trans.Pack 10K Res. Abstract: .. & 2N3906 Single PNP Trans.Pack Quad Res. Pack. 10K Res. 2N3904 4.7K Res. 15 F, 16V μ. VIN. VSS. RES. VDD. P15. P14. P13. P12. P11. P10. P9. P8. PC - to - BS2p24-IC connection. BS2p24-IC MODULE Rev. B updated 5 .. datasheet abstract..	49.89 Kb	1 Pages

	First line: BS2-IC MODULE Quad Res. Pack 4.7K Res. Dual Trans. Pack 10K Res. Abstract: .. & 2N3906 MN13811-Q Quad Res. Pack Dual NPN Trans. Pack Single PNP Trans.Pack 4.2V Brown .. datasheet abstract..	34.9 Kb	1 Pages

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Specsheet Results
	2N3906	N/A	Silicon PNP	Specification

	2N3906	N/A	Medium Power, General Purpose	Specification

	2N3906CSM	N/A	Medium Power, General Purpose	Specification

	2N3906D	N/A	Si PNP LP HF BJT	Specification

	2N3906DA(CHIP)	Zetex Semiconductors	Si PNP LP HF BJT	Specification

	2N3906DB(CHIP)	Zetex Semiconductors	Si PNP LP HF BJT	Specification

	2N3906DC(CHIP)	Zetex Semiconductors	Si PNP LP HF BJT	Specification

	2N3906LT1	N/A	PNP Transistor	Specification

	2N3906RA	N/A	Si PNP LP HF BJT	Specification

	2N3906T/R	Philips Semiconductors / NXP Semiconductors	Si PNP LP HF BJT	Specification

Cross References
	2N3906	Cross References (115)

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