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First line: 2N3905 2N3906 Version 2004-01-20 Switching Transistors Si-Epitaxial PlanarTransistors Power dissipation Verlustleistung Plastic Abstract: .. 2N3905, 2N3906 Switching Transistors PNP Si-Epitaxial PlanarTransistors PNP Version 2004-01-20 Power dissipation – Verlustleistung 625 mW Plastic case TO-92 Kunststoffgehäuse .. datasheet abstract.. |
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First line: Small Signal Transistor PROCESS CP792 Amp / Switch Transistor Chip PROCESS DETAILS Process Size Abstract: .. PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMPT3906E CMST3906 CXT3906 CZT3906. GEOMETRY. PROCESS DETAILS. BACKSIDE COLLECTOR. R0 06 -April 2004 Process EPITAXIAL PLANAR. Die .. datasheet abstract.. |
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First line: Semiconductor 2N3906 Silicon Transistor Descriptions General small signal application Switching application Features Abstract: .. 2N3906 PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary .. datasheet abstract.. |
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First line: 2N3905 2N3906 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3905 / 2N3906. PNP Silicon Epitaxial Planar Transistor. for switching and amplifier applications. As complementary types the NPN trans istors. 2N3903 and 2N3904 are recommended. On special .. datasheet abstract.. |
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First line: 2N3906 General Purpose Transistors TO-92 EMITTER BASE COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25 Abstract: .. 2N3906. WEITRON http://www.weitron.com.tw. IC= -10 mAdc, VCE=-1.0 Vdc IC= -50 mAdc, VCE= 1.0 Vdc DC Current Gain. DC Current Gain. 100 400 1 2 60. -0.3. -0.95. - Classification of hFE 1 Rank .. datasheet abstract.. |
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First line: Combo Keyboard Rev Description Value 100n ECAP ECAP Resistor Resistor Resistor Resistor Abstract: .. PNP TRANSISTOR 1 2N3906 Q1. MC68HC908JB8 1 QFP44 U1. CRYSTAL 1 6MHz X1. 4-PIN HEADER 2 2.54mm J2 J7. 5-PIN HEADER 1 2.54mm J3. 8-PIN HEADER 1 2.54mm J4. 9-PIN HEADER 2 2.54mm J5-6. 4-PIN HEADER 1 2.54mm J1. DIP .. datasheet abstract.. |
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First line: 2N3905 2N3906 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3905 / 2N3906. PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN trans istors. ST 2N3903 and ST 2N3904 are recommended. On .. datasheet abstract.. |
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First line: 2N3905 2N3906 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3905 / 2N3906. PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN trans istors. ST 2N3903 and ST 2N3904 are recommended. On .. datasheet abstract.. |
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First line: Abt. Allg. Elektrotechnik Mikroelektronik Lares Programmer PC Circuit Diagram 1N4004 Power CON2 Abstract: .. 2N3904 2N3906. E B C. BC516 BC517. C B E. D3 D4 0V +5V +13.5V 0 0 0 1 0. 1 0 0 0 1. 0 1 1 0 0. 1 1 1 0 0. LED Logic. C11 10μF .. 2N3906. T5. BC517. T6. BC517. T7. BC517. T9. BC517. T8. 2N3904. R15 680Ω. R16 47K5Ω. D7 1N4148. adjust for. BUSY. 11 .. datasheet abstract.. |
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First line: PROCESS CP592V Small Signal Transistors Amp / Switch Transistor Chip PROCESS DETAILS Process Size Abstract: .. PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CXT3906 CZT3906. Process EPITAXIAL PLANAR. Die Size 12 x 20 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 3.6 X 3.6 MILS. Emitter .. datasheet abstract.. |
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First line: PROCESS Small Signal Transistor Amp / Switch Transistor Chip CP592 Central Semiconductor Corp. PROCESS Abstract: .. PRINCIPAL DEVICE TYPES 2N3906 CMPT3906 CMST3906 CXT3906 CZT3906. Process EPITAXIAL PLANAR. Die Size 12 x 20 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 3.6 X 3.6 MILS. Emitter Bonding Pad Area .. datasheet abstract.. |
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First line: PROCESS CP792V Small Signal Transistor Amp / Switch Transistor Chip Central Semiconductor Corp. PROCESS Abstract: .. PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMPT3906E CMST3906 CXT3906 CZT3906. GEOMETRY. PROCESS DETAILS. BACKSIDE COLLECTOR. R1 15 -April 2005 Process EPITAXIAL PLANAR. Die .. datasheet abstract.. |
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First line: Application Note Layout Power Control ARA05050 RELEVANT PRODUCTS ARA05050 impedance practical. Pins Abstract: .. Q1: 2N3906 Q2: 2N3904. @ #$%% * #$%% 3%0405. 4.*%00*46. $=$. #:E*"F& 7 $/"C0@@C’ 7 $/"C0@@C’$2 .. datasheet abstract.. |
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First line: PROCESS CP592V Small Signal Transistors Amp / Switch Transistor Chip PROCESS DETAILS Process Size Abstract: .. PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CXT3906 CZT3906. Process EPITAXIAL PLANAR. Die Size 12 x 20 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 3.6 X 3.6 MILS. Emitter .. datasheet abstract.. |
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First line: 2N3906 SMALL SIGNAL TRANSISTOR PRELIMINARY DATA Ordering Code 2N3906 2N3906-AP Marking 2N3906 Abstract: .. 2N3906. SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR NPN. TRANSISTOR ■ TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE NPN COMPLEMENTARY TYPE IS. 2N3904. APPLICATIONS .. datasheet abstract.. |
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First line: 2N3905 2N3906 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3905 / 2N3906. PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN trans istors. ST 2N3903 and ST 2N3904 are recommended. On special .. datasheet abstract.. |
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First line: 2N3905 2N3906 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3905 / 2N3906. PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN trans istors. ST 2N3903 and ST 2N3904 are recommended. On .. datasheet abstract.. |
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First line: 2N3906 MMBT3906 SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features Epitaxial Planar Construction Available Abstract: .. 2N3906 / MMBT3906 PNP SMALL SIGNAL TRANSISTORS. Features. • Epitaxial Planar Die Construction • Available in Both Through-Hole and Surface Mount Packages • Suitable for Switching and Amplifier .. datasheet abstract.. |
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First line: Notification Date June Process Change Notice Parts Affected Chip processes CP192V NPN Abstract: .. 2N3906 CMPT3906 CMPT3906E CMST3906. CMUT3906 CMXT3906 CMXT3946 CXT3906. CZT3906 MMPQ3906 MMPQ6700 MPQ3906. MPQ6700 2N3251. CP592-CEN1085-CT CP592-CEN1085-WN CP592-CMPT3906-CT CP592-CMPT3906 .. datasheet abstract.. |
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First line: 2N3906 Vishay Semiconductors Small Signal Transistor PNP Features Silicon Epitaxial Planar Transistor Abstract: .. 2N3906 2N3906-BULK or 2N3906-TAP Bulk / Ammopack. Parameter Test condition Symbol Value Unit. Collector - emitter voltage - VCEO 40 V. Collector - base voltage - VCBO 40 V. Emitter - base voltage - VEBO .. datasheet abstract.. |
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First line: Transistors SPEC-A38 Transistors FElectrical characteristic curves UMT3906 / SST3906 / MMST3906 / 2N3906 Transistors FElectrical characteristic curves UMT3906 / SST3906 / MMST3906 / 2N3906 Abstract: .. Transistors UMT3906/SST3906/MMST3906/2N3906. Electrical characteristic curves. 611. Transistors UMT3906/SST3906/MMST3906/2N3906. Electrical characteristic curves. 612. Transistors .. datasheet abstract.. |
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First line: 2N3906 Elektronische Bauelemente RoHS Compliant Product suffix specifies halogen lead-free Silicon General Abstract: .. Elektronische Bauelemente. 2N3906 PNP Silicon General Purpose Transistor. TO-92. î FEATURES . Power Dissipation PCM: 625 mW Ta=25 : . Collector Current ICM: -200 mA. . Collector - Base Voltage .. datasheet abstract.. |
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First line: LM2940-5.0 24LC16B 4.7K 2N3904 RTCC PBASIC2 / P MCLR OSC1 OSC2 Resonator Vout MN13811 Abstract: .. 2N3906. Q1. 2N3904. Q2. 2N3904. 10K 10K. 2. 1. 3. U3. MN13811. R1. 4.7 K. R2. 4.7K. RA0. 6. RA1. 7. RA2. 8. RA3. 9. RB0. 10. RB1. 11 .. datasheet abstract.. |
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First line: 2N3906 2N3906 Version 2006-09-12 Power dissipation Verlustleistung Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistoren Abstract: .. 2N3906 PNP Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistoren PNP Version 2006-09-12 Dimensions - Maße [mm] Power dissipation Verlustleistung .. datasheet abstract.. |
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First line: 6-21-05 Rev. LM2698 Array Driver 33µH 0.75A 10µF FSLCT LM2698 SHDN Theory Abstract: .. Q1-8 2N3906 PNP SOT-23. 40V 200mA. 8 Various. D1 SS12. Schottky Diode. SMA. 20V 1A. 1 Vishay. L1. SLF7032T .. datasheet abstract.. |
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First line: 2N3906 SMALL SIGNAL TRANSISTOR PRELIMINARY DATA Type 2N3906 Marking 2N3906 SILICON EPITAXIAL Abstract: .. 2N3906. SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR NPN. TRANSISTOR ■ TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE NPN COMPLEMENTARY TYPE IS. 2N3904. APPLICATIONS .. datasheet abstract.. |
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First line: 2N3906 SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Construction Available Both Through-Hole Surface Abstract: .. 2N3906. PNP SMALL SIGNAL TRANSISTOR. Features Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier. Applications .. datasheet abstract.. |
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First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 2N3905 / D General Purpose Transistors Silicon Abstract: .. 2N3906. IC = 1.0 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 10 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 50 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 100 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. hFE. 30 60. 40 80. 50 100. 30 .. datasheet abstract.. |
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First line: 2N3906 2N3906 MMBT3906 MMPQ3906 PZT3906 Discrete POWER Signal Technologies MMBT3906 TO-92 SOT-23 Abstract: .. 2N3906 / MMBT3906 / MMPQ3906 / PZT3906. N. Discrete POWER & SignalTechnologies. PNP General Purpose Amplifier. This device is designed for general purpose amplifier and switch-ing applications .. datasheet abstract.. |
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First line: 2N3906 MMBT3906 MMPQ3906 PZT3906 Discrete POWER Signal Technologies 2N3906 MMBT3906 TO-92 SOT-23 Abstract: .. 2N3906 / MMBT3906 / MMPQ3906 / PZT3906. PNP General Purpose Amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 μA to 100 mA. .. datasheet abstract.. |
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First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 2N3905 / D General Purpose Transistors Silicon Abstract: .. 2N3906. IC = 1.0 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 10 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 50 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. IC = 100 mAdc, VCE = 1.0 Vdc 2N3905. 2N3906. hFE. 30 60. 40 80. 50 100. 30 .. datasheet abstract.. |
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First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 2N3905 / D General Purpose Transistors Silicon Abstract: .. 2N3906 / MMBT3906 / PZT3906. PNP General Purpose Amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 μA to 100 mA. Sourced from .. datasheet abstract.. |
167.14 Kb |
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First line: PRODUCT PRODUCT PRODUCT 2N3906 SMALL SIGNAL TRANSISTORS PNP TO-92 min. FEATURES Silicon Abstract: .. 2N3906. SMALL SIGNAL TRANSISTORS PNP FEATURES. ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the NPN transistor 2N3904 is recommended .. datasheet abstract.. |
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First line: 2N3906 Small Signal Transistor PNP TO-226AA TO-92 min. Features Silicon Epitaxial Planar Abstract: .. 2N3906. Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor. 2N3904 is recommended .. datasheet abstract.. |
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First line: 2N3906 EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES Collector-Emitter Voltage VCEO=40V Collector Abstract: .. UTC 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-028,A. GENERAL PURPOSE APPLIATION. FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation .. datasheet abstract.. |
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First line: 2N3906 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation Tamb=25 Collector current -0.2 Abstract: .. TO-92 Plastic-Encapsulate Transistors Transistor PNP 2N3906. FEATURES. Power dissipation P :0.625 W Tamb=25 C Collector current I :-0.2 A. Collector-base voltage V :-40 V. Operating and storage .. datasheet abstract.. |
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First line: UMT3906 / SST3906 / MMST3906 / 2N3906 Transistors General Purpose Transistor UMT3906 SST3906 MMST3906 2N3906 Features BVCEO -40V Abstract: .. UMT3906/SST3906/MMST3906/2N3906 Transistors. Rev.A 1/4. PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 / 2N3906. z Features 1 BVCEO > −40V IC= −1mA 2 Complements the T3904/SST3904 .. datasheet abstract.. |
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First line: UMT3906 SST3906 MMST3906 2N3906 Transistors General Purpose Transistor UMT3906 SST3906 MMST3906 2N3906 Abstract: .. UMT3906 / SST3906 / MMST3906 / 2N3906. Transistors. PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 / 2N3906. !Features 1 BVCEO < -40V IC=-1mA 2 Complements the UMT3904 / SST3904 .. datasheet abstract.. |
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First line: THAT Corporation Design Note Alternate Method Indicating Compression Indicating above-threshold condition with Abstract: .. Q2 2N3906. R3 10k. Compression Indicator. OA1Output. Figure3.Compressionindicatorwith .. datasheet abstract.. |
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First line: 2N3906 EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES Collector-Emitter Voltage VCEO=40V Collector Abstract: .. UTC 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-028,A. GENERAL PURPOSE APPLIATION. FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation .. datasheet abstract.. |
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First line: 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 PZT3906 TO-92 SOT-23 Mark SOT-223 General Purpose Abstract: .. 2N3906 *MMBT3906 *PZT3906. PD Total Device Dissipation. Derate above 25°C. 625 5.0. 350 2.8. 1,000 8.0. mW mW/°C. RθJC Thermal Resistance, Junction to Case 83.3 °C/W. RθJA Thermal Resistance, Junction .. datasheet abstract.. |
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First line: 2N3906 Preferred Device General Purpose Transistors Silicon COLLECTOR Symbol VCEO VCBO Abstract: .. 2N3906 Preferred Device. General Purpose Transistors PNP Silicon. MAXIMUM RATINGS. Rating Symbol Value Unit. Collector‐Emitter Voltage VCEO 40 Vdc. Collector‐Base Voltage VCBO 40 Vdc. Emitter .. datasheet abstract.. |
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First line: Features omponents Marilla Street Chatsworth 2N3906 Through Hole Package Capable 600mWatts Power Abstract: .. 2N3906. DC Current Gain vs Collector Current. hFE. IC mA 40. 80. 120. 160. 200. 220. 0.1 1 10 100. Base-Emitter ON Voltage vs Collector Current. VBE ON - V IC - mA 0. 0.2. 0.4. 0.6. 0.8. 1.0. 1.2. 0.1 1.0 10 100. Collector .. datasheet abstract.. |
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First line: SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N3906 EPITAXIAL PLANAR TRANSISTOR Abstract: .. 2N3906. * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2002. 9. 12 3/4. 2N3906. Revision No : 2. C. 0. COLLECTOR CURRENT I mA COLLECTOR CURRENT I mA 0. C. 0. BASE-EMITTER VOLTAGE V V BE. BE C I - V. 10. DC CURRENT .. datasheet abstract.. |
49.83 Kb |
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First line: Features omponents Itasca Street Chatsworth 2N3906 Through Hole Package Capable 600mWatts Power Abstract: .. 2N3906. DC Current Gain vs Collector Current. hFE. IC mA 40. 80. 120. 160. 200. 220. 0.1 1 10 100. Base-Emitter ON Voltage vs Collector Current. VBE ON - V IC - mA 0. 0.2. 0.4. 0.6. 0.8. 1.0. 1.2. 0.1 1.0 10 100. Collector .. datasheet abstract.. |
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First line: SPECIFICATION NOTICE LT1166 November1997 application circuit Figure 100W Audio Amplifier LT1166 data Abstract: .. 2N3906. R11 100TM. R3 10k. ‐ + U2. LT1363. 7. 6. 4. 3. 2. C2 470pF. R2 100TM. R1 100TM. C4. 20pF. C3 470pF. C. B. A. R24 2.4k .. datasheet abstract.. |
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First line: STMicroelectronics EVALPRACTISPIN Quantity Reference C3C5 Part Description 0.1uF ceramic capacitor 0.01uF ceramic Abstract: .. 1 Q1 transistor 2N3906 STMicroelectronics TH. 1 R1 470k 5% 1/4W resistor ERD-S2TJ474V PANASONIC AXIAL TH. 1 R2 10k 5% 1/4W resistor ERD-S2TJ103V PANASONIC AXIAL TH. 1 R18 50k pot resistor 3386P-1 .. datasheet abstract.. |
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First line: Menlo Drive Suite Rocklin Office 624-8333 Fax 624-8003 General Technical Site www.parallax.com Abstract: .. & 2N3906 .. datasheet abstract.. |
411.79 Kb |
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First line: BS2p24-IC MODULE Dual Trans. Pack 10K Res. 2N3904 Single Trans.Pack 10K Res. Abstract: .. & 2N3906 Single PNP Trans.Pack Quad Res. Pack. 10K Res. 2N3904 4.7K Res. 15 F, 16V μ. VIN. VSS. RES. VDD. P15. P14. P13. P12. P11. P10. P9. P8. PC - to - BS2p24-IC connection. BS2p24-IC MODULE Rev. B updated 5 .. datasheet abstract.. |
49.89 Kb |
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First line: BS2-IC MODULE Quad Res. Pack 4.7K Res. Dual Trans. Pack 10K Res. Abstract: .. & 2N3906 MN13811-Q Quad Res. Pack Dual NPN Trans. Pack Single PNP Trans.Pack 4.2V Brown .. datasheet abstract.. |
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