First line: 2N3055 Abstract: .. PRINCIPAL DEVICE TYPES 2N3055. GEOMETRY. PROCESS DETAILS. R1 20-March 2006 Process GLASS .. Tags: CP2352N3055datasheet abstract..
28.78 Kb
2 Pages
Original
First line: J 2N3055 2N3055 Abstract: .. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector .. Tags: J 2N30552N3055MJ2955datasheet abstract..
147.73 Kb
4 Pages
Original
First line: 2N3055 Abstract: .. Product Specification www.jm nic.com Silicon NPN Power Transistors 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter .. Tags: 2N3055MJ2955datasheet abstract..
68.92 Kb
4 Pages
Original
First line: MJ2955 2N3055 Abstract: .. 2N3055 MJ2955. Complementary power transistors. Features ■ Low collector-emitter saturation voltage. ■ Complementary NPN - PNP transistors. Applications ■ General purpose. ■ Audio Amplifier .. Tags: MJ29552N3055datasheet abstract..
75.55 Kb
7 Pages
Original
First line: 2N3055 Abstract: .. 2N3055 MJ2955. Complementary power transistors. Features ■ Low collector-emitter saturation voltage. ■ Complementary NPN - PNP transistors. Applications ■ General purpose. ■ Audio Amplifier .. Tags: MJ29552N3055datasheet abstract..
75.55 Kb
7 Pages
Original
First line: 2N3055 RCA 2N3055 Abstract: .. , 2N3055 File Number. 1699. General-Purpose Power Transistor Broadly Appllca.ble Devices for Industrial and Commercial Use Features: · High gain at high current .. Tags: 2N3055 RCA2N3055datasheet abstract..
107.19 Kb
3 Pages
OCR Scan
First line: 2n3055 Abstract: .. 2N3055 MJ2955. COMPLEMENTARY SILICON POWER TRANSISTORS. ■ STMicroelectronics PREFERRED. SALESTYPES ■ COMPLEMENTARY NPN-PNP DEVICES. DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar .. Tags: 2N3055MJ2955datasheet abstract..
29.97 Kb
4 Pages
Original
First line: Abstract: .. 2N3055 MJ2955. COMPLEMENTARY SILICON POWER TRANSISTORS. ■ STMicroelectronics PREFERRED. SALESTYPES ■ COMPLEMENTARY NPN-PNP DEVICES. DESCRIPTION. The 2N3055 is a silicon Epitaxial-Base Planar .. Tags: 2N3055MJ2955datasheet abstract..
45.37 Kb
4 Pages
Original
First line: Abstract: .. 2N3055 MJ2955. COMPLEMENTARY SILICON POWER TRANSISTORS. ■ ST PREFERRED SALESTYPES. ■ COMPLEMENTARY NPN-PNP DEVICES. DESCRIPTION. The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec .. Tags: 2N3055MJ2955datasheet abstract..
48.23 Kb
4 Pages
Original
First line: J 2N3055 2N3055 power circuit Abstract: .. INCHANGE Semiconductor isc Product Specification. isc Silicon NPN Power Transistor 2N3055. DESCRIPTION. ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter .. Tags: 2N3055 power circuitJ 2N3055MJ29552N3055datasheet abstract..
85.33 Kb
3 Pages
Original
First line: Abstract: .. DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity .. Tags: 2N3055datasheet abstract..
38.89 Kb
4 Pages
Original
First line: J 2N3055 MJ2955 300 watts amplifier Abstract: .. 2N3055, MJ2955 Complementary Power Transistors. Page 1 31/05/05 V1.0. Designed for use in general-purpose amplifier and switching applications. Features: • • Power dissipation - PD = 115W at .. Tags: MJ2955 300 watts amplifierJ 2N3055MJ29552N3055datasheet abstract..
327.51 Kb
5 Pages
Original
First line: Abstract: .. SILICON PLANAR POWER TRANSISTORS 2N3055 NPN. MJ2955 PNP. TO-3. Metal Can Package. General Purpose Switching and Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS .. Tags: MJ29552N3055datasheet abstract..
143.83 Kb
3 Pages
Original
First line: 2N3055 2n3055 equal MJ2955 300 watts amplifier Abstract: .. 2N3055/D. 2N3055, MJ2955 Preferred Device. Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. ∞ DC Current Gain - h FE = 20 -70 @ I .. Tags: MJ2955 300 watts amplifier2n3055 equalMJ29552N3055datasheet abstract..
79.83 Kb
4 Pages
Original
First line: 2N3055G MJ2955 300 watts amplifier 2N3055 Abstract: .. 2N3055/D. 2N3055, MJ2955 Preferred Device. Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. ∞ DC Current Gain - h FE = 20 -70 @ I .. Tags: MJ2955 300 watts amplifier2N3055GMJ29552N3055datasheet abstract..
81.03 Kb
4 Pages
Original
First line: 2N3055 power circuit Abstract: .. UTC 2N3055 SILICON NPN TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-003,A. SILICON NPN TRANSISTORS. The UTC 2N3055 is a silicon NPN transistor in TO-3. metal case. It is intended for power .. Tags: 2N3055 power circuit2N3055datasheet abstract..
51 Kb
2 Pages
Original
First line: Abstract: .. UTC 2N3055 SILICON NPN TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-003,A. SILICON NPN TRANSISTORS. The UTC 2N3055 is a silicon NPN transistor in TO-3. metal case. It is intended for power .. Tags: 2N3055datasheet abstract..
40.12 Kb
2 Pages
Original
First line: Abstract: .. COMSET SEMICONDUCTORS 1/2. 2N3055. The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output .. Tags: 2N3055datasheet abstract..
First line: 2N3055G Abstract: .. 2N3055/D. 2N3055 NPN , MJ2955 PNP Preferred Device. Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general purpose switching and amplifier .. Tags: MJ29552N3055MJ2955G2N3055Gdatasheet abstract..
First line: 2N3055 SDT9204 SDT9201 Abstract: .. ABSOLUTE MAXIMUM RATINGS 2N3055 SDT9201 SDT9202 SDT9203 SDT9204 BYe80 V ByeEO V ByEBO V 100 60. 55 45 12. 100 80 12 15. 120 100 12 15. 140 120 12 15 MAXIMUM OPERATING AREAS. .. A,lMx. Ie Max. A 18 .. Tags: SDT9204SDT9203SDT9202SDT92012N3055datasheet abstract..
54.83 Kb
1 Pages
OCR Scan
First line: 2N3055 Abstract: .. 2N3055. MJ2955. FEATURES: .. Power Dissipation - Po ::: 115W @ T c 2SoC * DC Current Gain hFE :: 20 - 70 @ Ie = 4.0 A .. VCE sat '" 1.1 V Max. @ Ic 4.0 A, Ie = 400 mA. = = .---- MAXIMUM RATINGS. Characteristic .. Tags: MJ29552N3055datasheet abstract..
186.13 Kb
3 Pages
OCR Scan
First line: Abstract: .. COMSET SEMICONDUCTORS 1/2. 2N3055. The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output .. Tags: 2N3055datasheet abstract..
First line: 2N3055 Abstract: .. HIGH POWER TRANSISTOR NPN 2N3055 15A 115W Technical Data. ..designed for general-purpose switching and amplifier application. DC Current Gain - h FE = 20 ‐ 70 @ IC = 4Adc Collector-Emitter Saturation .. Tags: 2N3055datasheet abstract..
47.16 Kb
2 Pages
Original
First line: 2N3055 Abstract: .. SILICON PLANAR POWER TRANSISTORS 2N3055 NPN. MJ2955 PNP. TO-3. Metal Can Package. General Purpose Switching and Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS .. Tags: MJ29552N3055datasheet abstract..
181.44 Kb
4 Pages
Original
First line: Abstract: .. 2N3055/7. Bipolar NPN Device. VCEO = 100V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. Tags: 2N3055datasheet abstract..
10.73 Kb
1 Pages
Original
First line: Abstract: .. 2N3055/6. Bipolar NPN Device. VCEO = 100V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. Tags: 2N3055datasheet abstract..
10.74 Kb
1 Pages
Original
First line: Abstract: .. 2N3055/5. Bipolar NPN Device. VCEO = 30V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. Tags: 2N3055datasheet abstract..
10.73 Kb
1 Pages
Original
First line: Abstract: .. 2N3055. Bipolar NPN Device. VCEO = 60V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. Tags: 2N3055datasheet abstract..
First line: Abstract: .. 2N6103 2N3055* 2N3442 2N6101 2N6099 2N3054 2N3441 * 16 15 10 10 10 4 3. S 4 3 5 4 0·5 0·5. TO-220 TO-3 TO-3 TO-220 TO-220 TO-66 TO-66. SO 70 90 160. SO SO 150. 140. SO. Also available in lower cost epitaxial-base .. Tags: 2N61032N61012N60992N34422N34412N30552N3054datasheet abstract..
60.21 Kb
2 Pages
OCR Scan
First line: Abstract: .. 2N6103 2N3055* 2N3442 2N6101 2N6099 2N3054 2N3441 * 16 15 10 10 10 4 3. S 4 3 5 4 0·5 0·5. TO-220 TO-3 TO-3 TO-220 TO-220 TO-66 TO-66. SO 70 90 160. SO SO 150. 140. SO. Also available in lower cost epitaxial-base .. Tags: 2N61032N61012N60992N34422N34412N30552N3054datasheet abstract..
62.19 Kb
2 Pages
OCR Scan
First line: Abstract: .. 2N3055 NPN I MJ2955 PNP ELECTRICAL CHARACTERISTICS T C Characteristic. =25°C unless othervvise noted Symbol. Min. Max. Unit. OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage 1 Ic .. Tags: MJ29552N3055datasheet abstract..
First line: Abstract: .. 2N3055 JAN, JTX. Processed per MIL-PRF-19500/407. NPN SILICON POWER TRANSISTOR. TO-3 TO-204AA MIL-PRF. QPL. DEVICES. 6 Lake Street, Lawrence, MA 01841 3/98 REV: B. 1-800-446-1158 / 978 794-1666 .. Tags: 2N3055datasheet abstract..
28.68 Kb
2 Pages
Original
First line: 2N3055 Abstract: .. "The 2N3055 and the 2SK135 should both be heatsunk -- the FET has a source to case connection, so can be bolted straight down, but the 2N3055 must be insulated with the usual mica washer, and plastic .. Tags: 2N30552SK135datasheet abstract..
37.14 Kb
2 Pages
Original
First line: Abstract: .. 2N3055 JAN SERIES. ELECTRICAL CHARACTERISTICS con’t Characteristics Symbol Min. Max. Unit. ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 0.5 Adc, VCE = 4.0 Vdc IC = 4.0 Adc, VCE = 4.0 .. Tags: 2N3055datasheet abstract..
52.97 Kb
2 Pages
Original
First line: Abstract: .. Silicon NPN Transistor. 2N3055 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Nates A B C D H. .250 .435 .038 1.177 .655 .420. .875 .450. -. Pin 1 - Base Pin 2 - Emitter Pin 3 - Coli ector. E. F G H J K L fA .. Tags: 2N3055datasheet abstract..
139.52 Kb
2 Pages
OCR Scan
First line: 2N3055 Abstract: .. TYPE 2N3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR. FOR POWER·AMPLIFIER APPLICATIONS. · 115 W at 25°C Case Temperature. · Max Ie of 15 A · Min f hfe of 20 kHz 'mechanical data. All JEDEC .. Tags: 2N3055datasheet abstract..
61.62 Kb
2 Pages
OCR Scan
First line: 2N3055 Abstract: .. 2N3055. 10 Amp NPN Silicon Power Transistors 80 W. Features • Designed for general-purpose switching and amplifier applications • With TO-3 package. Maximum Ratings Symbol Rating Rating Unit. V .. Tags: 2N3055datasheet abstract..